14nm FinFET technology for analog and RF applications

This paper highlights a 14nm Analog and RF technology based on a logic FinFET platform for the first time. An optimized RF device layout shows excellent F
t
/F
max
of (314GHz/180GHz) and (285GHz/140GHz) for NFET and PFET respectively. A higher PFET RF performance compared to 28nm technology is due to a source/drain stressor mobility improvement. A benefit of better FinFET channel electrostatics can be seen in the self-gain (G
m
/G
ds
), which shows a significant increase to 40 and 34 for NFET and PFET respectively. Superior 1/f noise of 17/35 f(V∗μm)
²
/Hz @ 1KHz for N/PFET respectively is also achieved. To extend further low voltage operation and power saving, ultra-low Vt devices are also developed. Furthermore, a deep N-well (triple well) process is introduced to improve the ultra-low signal immunity from substrate noise, while offering useful devices like VNPN and high breakdown voltage deep N-well diodes. A superior F
t
/F
max
, high self-gain, low 1/f noise and substrate isolation characteristics truly extend the capability of the 14nm FinFETs for analog and RF applications.