Improving electro-magnetic susceptibility performances of high side switches: Case of high side of LIN physical layers

Driver circuits using high side switches, are commonly used in electronic applications. A challenging aspect of the integrated circuit design of such driver circuits comes from the control of the state of the circuit with high reliability when it is under harsh electrical conditions. It includes safe operations and predictable behavior under high level of Electromagnetic Interference (EMI). The typical and critical case occurs when the driver change from one state to the other one unexpectedly. The compliance of the circuit to keep its functionality should be assessed following standard testing methods such as, “Direct Power Injection” (DPI) at the IC level. Conventional design solutions may not be robust enough to prevent from erroneous operation during EMI disturbances. This paper will investigate new design method to improve EMC performance of high side switch driver.