Comparison of Ni/Au and Pd/Au ohmic contacts to p-GaN

This paper describes a comparative study of Ni/Au and Pd/Au ohmic contacts to p-GaN. Effects of annealing temperature and acceptor concentration on ohmic characteristics were investigated. It was found that both ohmic contacts exhibited a contact resistivity of less than 4×10
^-3
Ωcm
²
after 600 °C annealing. Moreover, fairly good ohmic behaviors were observed for Pd/Au even without annealing.