Heteroepitaxial growth of ε-Ga2O3 thin films on cubic (111) GGG substrates by mist chemical vapor deposition

We demonstrated that heteroepitaxial ε-Ga₂O₃ thin films can be grown on (111) GGG substrates by mist CVD. The out-of-plane and in-plane epitaxial relationship between the ε-Ga₂O₃ thin film and the (111) GGG substrate was determined to be (0001) ε-Ga₂O₃ [10-10] // (111) GGG [-1-12] by XRD 2θ-ω and φ scanning. This is the first report on heteroepitaxial growth of ε-Ga₂O₃ thin films on (111) GGG substrates by mist CVD.