Inner cylinder Ta/sub 2/O/sub 5/ capacitor process for 1 Gb DRAM and beyond

Capacitor manufacturing technology for 0.13 /spl mu/m design rule 1 Gbit DRAMs has been developed using an improved MIS (metal-insulator-semiconductor) tantalum oxide capacitor module process in a cylinder-shaped storage node with rugged-type inner surface (called inner cylinder). Capacitance of more than 26 fF/cell, leakage current of below 0.2 fA/cell at V/sub p/=1.0 V and breakdown lifetime of over 10 years were obtained as electrical properties, satisfying production level requirements.