Benchmarking power transistors and power modules for high-temperature operation (Tj∼200°C)

Structural and construction characteristics of leading edge high-temperature SiC semiconductor devices are analyzed in this paper. Representative power devices having Tj=175°C and Tj=200°C were selected for the study: Two 1200V-SiC-based devices: ROHM's SCH2080KE and STMicro's SCT30N120. This benchmark study identifies key technologies that enable Tj = 200°C operation. In addition, two latest generation SiC-based power modules were also analyzed: ROHM's 3rd generation SiC MOSFET BSM180D12P3 and Wolfspeed's CAS325M12HM2, the latter featuring novel Si
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power substrate on AlSiC base-plate. Two Si-based transistors, Infineon's SPI21N10 (100V MOSFET) and STMicro's STGW40V60DLF (600V IGBT), were also included in the analysis for comparison purpose. The paper briefly describes the analyzed device structures, metallization, wire bond strength test results, EDX analysis of die attach materials, FTIR, and GC-MS analysis results of the mold resin.