Dual On-State Gate Driver Concept for Improved Drive of Silicon Carbide MOSFETs

A novel gate drive concept with two separately adjustable on-state gate source voltage levels for improved driving of silicon carbide MOSFETs is presented. The new approach allows enhanced use of SiC-MOSFETs conduction properties in combination with fast and efficient switching operation. The impact of the concept is tested and compared with a conventional gate drive circuit. Tests are performed in a standard buck converter equipped with a commercially available TO-packaged SiC-MOSFET. The buck converter operates at a switching frequency of 50 kHz, 600 V dc-link voltage and output power up to 13 kW.