Device Simulation Modeling of 1200 V SiC MOSFETs

SiC MOSFETs for 1200 V rating were fabricated and used for comparing electrical measurements with device simulations. The MOSFET subthreshold characteristic was used for tuning the simulation model parameters for acceptor interface traps at the SiC/SiO2 interface. Good agreement between measurements and simulations was obtained for ID-VGS, ID-VDS and breakdown voltage, whereas qualitative agreement was obtained for the reverse transfer capacitance and switching waveforms.