Reliable Interconnection Technologies for High-Temperature Operation of SiC MOSFETs

For power electronics applications such as power conversion for renewable energies, industrial applications, and in particular electric vehicles, the high operating temperatures achievable with SiC power semiconductors are a promising feature. However, high-temperature operation is not only limited by the device capabilities, but also by the packaging technologies used. In this paper, a packaging concept for operation of SiC MOSFETs at temperatures of 200deg C and beyond is presented. The concept is based on Ag-sintered chip front- and backside and Cu wire or Ag ribbon interconnection. The feasibility of the packaging concept for a SiC-based power module is demonstrated, and thermal shock cycling and high-temperature storage tests have been performed to benchmark different materials and technologies and to verify the reliability of the proposed concept.