Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

In this study, we constructed a novel measurement setup with a large current rating to measure fast I
_d
change, and evaluated the decrease in I
_d
due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (V
_th
) shift measured by a conventional DC gate stress test, we verified that the conventional DC stress test is not sufficient for accurate evaluation of the V
_th
shift.