Characterization of X-ray radiation hardness of diamond Schottky barrier diode and metal-semiconductor field-effect transistor

Diamond has attracted extensive attention for the next generation semiconductor devices, such as high-power, low-loss and high-frequency devices under high temperature conditions. In this paper, a radiation hardness of diamond unipolar devices such as Schottky barrier diode (SBD) and metal-semiconductor field-effect transistor (MESFET) was discussed. No any degradation of ideality factor or specific on-resistance of diamond SBD was observed even after 10 MGy X-ray irradiation. The breakdown voltage was increased after the irradiation since the leakage current increased. The forward current capability and the transconductance of MESFET were almost constant to the X-ray irradiation.