High power, high frequency SiC-MOSFET system with outstanding performance, power density and reliability

The paper presents the benefit of an optimized gate drive which can be achieved with a new generation of very low inductive 1200V, 400A SiC-MOSFET half bridge module and a new and adapted gate driver. After presenting the influence of the dead time to the static and dynamic losses of SiC-MOSFET and internal body diode a calculation of the possible output current versus frequency is performed. Finally the results are verified by calorimetrie measurements in a real inverter application.