A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness

In this paper, a novel 1700V recessed emitter trench IGBT (RET-IGBT) is proposed. The RET-IGBT features an additional recessed trench between two adjacent active trenches and under the emitter contact, which reduces the drawn trench to trench separation from 6μm to 2μm. Combined with a double-dose carrier storage (CS) layers, the injection enhancement effect is enhanced. As a result, the trade-off relationship between V
_CE(ON)
and E
_OFF
is improved. The fabricated RET-IGBT shows record low V
_CE(ON)
of 1.65V at 150A (110A/cm
^-2
), no degradation in breakdown voltage and short circuit performances whilst enhancing the current handling capability in spite of increased current density.