Short noise suppression factor for nano-scale MOSFETs working in the saturation region

In this paper, we present a consistent perspective to interpret the channel noise of MOSFETs as suppressed shot noise for both long- and short-channel devices. We also derive an easy-to-use analytical equation for the shot noise suppression factor of MOSFETs working in the saturation region. The expression only relies on two process parameters - threshold voltage and effective oxide thickness, to predict the level of suppression for any CMOS technology. Together with the shot noise limit 2qI
D
, the suppression factor can accurately model MOSFET channel noise without invoking the channel length modulation effect. Moreover, we compare the modeled suppression factors with experimental values extracted from published experimental data in 180-nm and 40-nm technologies.