Deep traps in In0.3Ga0.7As nFinFETs studied by Generation-Recombination noise

The assessment of deep traps in In
0.3
Ga
0.7
As nFinFETs by Generation-Recombination (GR) noise spectroscopy is described in this paper. The gate voltage dependence of the corner frequency is studied for several devices with different gate lengths. Both gate-voltage-independent and gate-voltage-dependent corner frequencies are found. It is shown that the noise type turns from GR to Random Telegraph Signal (RTS) when the device size scales. For GR noise, the activation energy of the traps is extracted, which can tentatively be attributed to O-related traps and dislocations, with an effective density of these deep levels varying from 10
¹¹
/cm
²
to 10
¹²
/cm
²
. For RTS, the capture and emission time constant are extracted. It could be ascribed to a single trap in the gate oxide rather than in the film, and it is concluded that the trap level is lower than the Fermi level when no bias is applied.