Impact of channel orientation on low frequency noise performances of UTBOX nMOSFETs operated at liquid nitrogen temperature

Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard <;100> and rotated <;110>). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated device. However, unexpected variation of the flicker noise in strong inversion was observed for the long rotated channel. Furthermore, evolution of generation-recombination noise as a function of temperature is investigated to identify traps and evaluate the quality of the Si film.