Locking characteristics of a side-mode injected semiconductor laser

This paper is focused on an experimental study of the injection-locking bandwidth and the relaxation oscillation frequency in a side-mode injection-locked semiconductor laser. It is shown that, for such a laser, the injection-locking bandwidth and the relaxation oscillation frequency are related to the injection power and the wavelength of the target injection mode. At fixed launched injection power, the injection-locking bandwidth and relaxation oscillation frequency can be increased when the injection wavelength is detuned to the short-wavelength side of the free-running wavelength, while the relaxation oscillation frequency decreases when the injection wavelength is set to the long-wavelength side of the free-running wavelength. The results are in good agreement with theoretical predictions.