High-mobility poly-Si TFTs fabricated on flexible stainless-steel substrates

High mobility polycrystalline Si thin-film transistors (poly-Si TFTs) are firstly fabricated on flexible stainless-steel substrates 100 μm thick through low-temperature processes where both active Si and gate SiO
₂
films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. The gate SiO
₂
films are sputter-deposited in oxygen atmosphere from the SiO
₂
target. Resulting poly-Si TFTs show excellent characteristics of mobility of 106 cm
²
/V/spl middot/s and drain current on-off ratio of as high as 1×10
⁶
. Thus, the poly-Si TFTs are very promising for realizing novel flat panel displays of lightweight and rugged LCDs and LEDs.