Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

Defect less semiconductor-on-insulator (-OI) by a cost-effective and low-temperature process is strongly needed for monolithic 3-D integration. Toward this, in this paper, we present a cost-effective fabrication of the indium gallium arsenide-OI structure featuring the direct wafer bonding (DWB) and epitaxial lift-off (ELO) techniques as well as the reuse of the indium phosphide donor wafer. We systematically investigated the effects of the prepatterning of the III-V layer before DWB and surface reforming (hydrophilic) to speed up the ELO process for a fast and high-throughput process, which is essential for cost reduction. This method provides an excellent crystal quality of In
_0.53
Ga
_0.47
As on Si. Crystal quality of the film was evaluated using Raman spectra, and transmission electron microscope. Finally, we achieved good electrical properties of In
_0.53
Ga
_0.47
As-OI metal-oxide-semiconductor field-effect-transistors fabricated through the proposed DWB and ELO.