Raman spectroscopy analysis utilized to identify stress induced leakage from power and high speed technologies using deep trench isolation schemes

Power and Advanced BiCMOS technologies use deep trench architecture to reduce capacitance and leakages that are enhanced by high electric fields and high current applications. In this paper, a power and an advanced BiCMOS technology with deep trench architectures used micro Raman spectroscopy to identify non-uniform stress regions in the circuit. Using this information, architectural changes were implemented to reduce the overall stress and subsequent leakage. In both cases, multiprobe yields were increased due to the reduced circuit leakage.