Fully-scalable 2D THz radiating array: A 42-element source in 130-nm SiGe with 80-µW total radiated power at 1.01 THz

This paper presents a 1-THz radiating array using IHP 130-nm SiGe process. It is based on a highly-scalable 2D structure that uses a square grid of slots to simultaneously (1) maximize and synchronize the fundamental oscillation (f
₀
=250 GHz) and 4
^th
-harmonic generation (4f
₀
=1 THz) of a large array of transistors, (2) synthesize standing-wave patterns with near-field cancellation at f
₀
, 2f
₀
and 3f
₀
and efficient radiation at 4f
₀
. The compact design enables implementation of 42 coherent radiators on a 1-mm
²
area. The chip consumes 1.1-W DC power and generates 80-μW total radiated power with 13-dBm EIRP.