A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power

This paper presents a 430 GHz source implemented in a 0.13-μm SiGe BiCMOS technology with f
_T
/f
_max
of 300 GHz/450 GHz. The source comprises a fundamental differential Colpitts cascode oscillator at 215 GHz driving a balanced common-collector doubler that utilizes inductive 2
^nd
-harmonic feedback at the emitter output in order to boost the generated 2
^nd
-harmonic current. The doubler is co-designed with a lens-coupled on-chip circular slot antenna providing the appropriate input impedance to the doubler output. In combination with a 3-mm diameter silicon-lens, the total peak radiated power is -6.3 dBm at a power dissipation of 165 mW. To the authors knowledge, the presented source shows the highest reported power for any silicon-based single-element radiator beyond 350 GHz.