Reliability of hybrid bond interconnects

Hybrid bonding, with wafer-level bonding to form oxide-oxide bonds and Cu-Cu bonds, is a promising technology for 3D integrated circuits. In this study, we describe the design, processing. and characterization of test structures formed using hybrid bonding for wafers built in two different technologies; a 180 nm Al BEOL technology and a 110nm Cu BEOL technology. The reliability evaluation shows good results for package level and wafer level stresses.