Maleic-PEGX-SR3 thin films for polymer light-emitting devices

In this study, the characteristics of Maleic-PEGX-SR3 thin films are investigated. This thin film is expected to use as the light emitting layer of polymer light editting diode (PLED). The effect of solution concentration and annealing temperature on the properties of thin films deposited on glass are examined. Thin films are characterized by photoluminescence (PL), scanning electron microscopy (SEM), UV-vis absorption spectrum (UV-vis), and ultraviolet photoemission spectroscopy (UPS). The PL spectra of the thin films prepared by various solution concentrations on glass peak at ~ 450 nm. The trend of a red shift in PL spectra is observed with increasing solution concentration. In addition, the PL intensity increases with increasing solution concentration is observed. Optical energy band gap (E_g) is ~ 3.03 eV. Highest occupied molecular orbital (HOMO) is about 10.55 eV. Lowest unoccupied molecular orbital (LUMO) is about 7.52 eV.