Mechanical simulations of BOX creep for strained FDSOI

The `BOX creep' technique consists in introducing stress in a SOI layer by taking advantage of the creep of the buried oxide enabled its low viscosity at high temperature. In this study, we deeply investigate the impact of the structure geometry and parameters on the efficiency of creep through mechanical simulations. We find that a 1.1GPa stress can be achieved for an active length of 400nm. This result shows that BOX creep can be an efficient way to boost the performance of future FDSOI technology generations.