Dependence of MOSFETs threshold voltage variability on channel dimensions

The dependence of the MOSFET threshold voltage variability on device geometry (width (W) and length (L)) has been studied from experimental data. Our results evidence, in agreement with other works, deviations from the Pelgrom's rule, especially in smaller technologies. TCAD simulations were also performed which further support the experimental data and provide physical information regarding the origin of such deviation. Finally, a new empirical model that assumes different impact of W and L in the device variability has been proposed, which reproduces the experimental results.