A virtual SOI diode with electrostatic doping

Highly reconfigurable FD-SOI diodes with electrostatic doping controlled by gate bias are presented experimentally for the first time. Measurements show that the virtual p-n junction with gate-induced free carriers exhibits diode-like characteristics. A clear advantage of the virtual diode is that the doping levels are adjustable by the front and back gate biases. This flexibility enables the tuning of reverse current, forward current and breakdown voltage. Measurements and simulations explain why the models developed for standard diodes with physical doping do not apply.