Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles with a memory capacitor structure. Our approach is based on the use of indium oxide (In
2
O
3
) nanoparticles (or nanocrystals NCs) embedded in a dielectric matrix as a charge trapping layer using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. Current-voltage characteristics (I–V) showed bipolar switching behavior for all the fabricated devices, with I
ON
/I
OFF
ratios up to 10
⁵
. Moreover, our best structure yields up to 24 write/erase cycles, proving that our results provide insights for further integration of In
2
O
3
nanoparticles-based devices.