Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.