Effects of non-stoichiometry of silicon oxide layers in double barrier structure on high temperature annealing of ultrathin silicon layer

Double barrier structure with silicon layer instead of metal can potentially enable variety of intriguing applications of such a structure. The observations so far have pointed out that behavior of such structures during high temperature process may depend on availability of oxygen. It can potentially influence the result of race for silicon atoms between recrystallization and oxidation processes. The aim of this work is to study experimentally influence of excess or deficiency of oxygen (i.e. non-stoichiometric composition) in the barrier oxide layers of this structure (thus having direct contact with ultrathin silicon layer) during high temperature processes in controlled ambient atmosphere.