Nanoscale electrical characterization of a varistor-like device fabricated with oxidized CVD graphene

The electrical properties of an electron device that contains CVD graphene with oxidized grain boundaries are presented. We found that the device behaves as a varistor. The topographical and electrical properties of the graphene layer were studied at the nanoscale with CAFM and KPFM. The results confirm that the morphology and properties of the oxidized grain boundaries can be the origin for the device level characteristics and the device-to-device variability. Because of the properties of the analyzed structures, this device could be used in potential fully-2D materials based circuits.