Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance (
$R_{S})$
and the drain resistance (
$R_{D})$
. Because of its inherent vertical channel structure, the
$R_{S}$
and
$R_{D}$
are inevitably different. To observe the effects of the asymmetric
$R_{S}$
and
$R_{D}$
on LFN, a forward mode (FM) and reverse mode (RM) of voltage sweep were used. In the RM, the correlated mobility fluctuation effect was higher and the power spectral density of resistance fluctuation (
$S_{\mathrm{ RSD}})$
was lower than those in the FM. In addition,
$S_{\mathrm{ RSD}}$
was correlated with the
$R_{S}$
, but little with the
$R_{D}$
. To suppress
$S_{\mathrm{ RSD}}$
, it is important to minimize the
$R_{S}$
.