A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to −6 V. When biased around this breakdown voltage (their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved in D-band. Hence, because of its ability to be integrated within a Si process, one can strongly expect the use of this solid state noise source for high frequency in-situ noise characterization of advanced Si CMOS or BiCMOS technologies, with the aim to target millimeter-wave applications.