Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs

A detailed statistical characterization and modeling of drain current local and global variability in 14nm Si bulk FinFET devices is performed. To this end, an analytical mismatch model covering weak to strong inversion region is used to extract the main matching parameters. Our results show that, despite their very aggressive dimensions in terms of Fin width and height, such devices exhibit excellent local and global variability performance. Moreover, a Lambert-W function-based MOSFET compact model is used for MC simulation of local variability.