A V-band power amplifier using Marchand balun for power combining in 90n-nm CMOS process

A fully integrated power amplifier (PA) which is implemented in the 90-nm CMOS process technology for V-band applications is presented in this paper. The proposed PA is composed of three-stage common-source configuration and adopts Marchand baluns for power dividing/combining in the third stage. The CMOS PA delivers a 9-dBm saturated output power (i.e. P
_sat
) and has a 7.3-dBm output 1-dB compression point (OP
_1dB
) at 60 GHz. It performs a maximum power gain of 5.4 dB and a peak power-added efficiency (PAE) of 1.81%. The proposed PA draw a power consumption of 215 mW from the 1.2-V supply.