2.45GHz wide input range CMOS rectifier for RF energy harvesting

This paper presents a CMOS rectifier operating at 2.45 GHz for RF energy harvesting. The diode forward voltage drop, forward peak current and reverse leakage current issues have been addressed by utilizing a novel DC-boosted biasing technique. The proposed rectifier is implemented in 65 nm 6M/1P standard CMOS technology. In simulation, the proposed rectifier achieved peak efficiency of 59.6% with input power of -12 dBm at 2.45 GHz and 29 kΩ output load. PCE greater than 20% can be achieved over an extended input power range of 19 dB from -18 dBm to 1 dBm. The proposed rectifier has sensitivity of -17 dBm for 1 V output voltage.