Analysis of spin accumulation in a Si channel using CoFe/MgO/Si spin injectors

Spin accumulation in a Si channel using CoFe/MgO/Si spin injectors is investigated. Hanle-effect signals from spin-polarized electrons accumulated in the Si channel are observed using three-terminal spin-accumulation (3T-SA) devices with the spin injectors. The Hanle-effect signals are decomposed into two components, i.e., channel-spin and trap-spin components. The proportion of the channel-spin component depends on the process condition of the spin injectors. The spin-injector fabricated by an optimized process condition exhibits a single channel-spin component, although this phenomenon strongly depends on a bias applied to the spin-injector The energy-dependent trap-density distribution could affect this bias-dependent spin-injection phenomenon.