Degradation caused by Negative Bias temperature instability depending on Body Bias on NMOS or PMOS in 65 nm bulk and thin-BOX FDSOI processes

Reverse Body Bias (RBB) control on Fully Depleted Silicon On Insulator (FDSOI) with thin Buried OXide (BOX) layer mitigates power consumption on the standby mode. However, Degradation caused by Negative Bias Temperature Instability (NBTI) is changed by RBB. We measure aging degradation of ring oscillators by applying RBB to NMOS or PMOS. In bulk, RBB to PMOS suppresses NBTI-induced degradation because increasing threshold voltage reduces carriers in channel. However, RBB to NMOS does not suppress NBTI-induced degradation because Positive BTI (PBTI) is not dominant in NMOS. In FDSOI, RBB to not only PMOS but also NMOS suppresses NBTI-induced degradation because BOX layer intercepts carriers to flow to substrate.