Integration of III–V nanowires for the next RF- and logic technology generation

III-V nanowire MOSFETs are attractive at scaled nodes [1]. The advantageous transport properties increase the drive current and improve the high-frequency properties. The nanowire geometry allows for excellent electrostatic control, and eases the path for integration on the Si platform. In this paper, we will present state-of-the-art III-V nanowire MOSFETs and discuss the benefits of vertical and lateral configurations. We will, in particular, demonstrate the III-V nanowire advantages for TunnelFETs and highlight the prospects in the RF-domain. The high current levels measured demonstrates the potential for III-V nanowire MOSFFETs.