Filament control of field-enhanced WOx resistive memory toward low power applications

Significant improvements for low power WO
_x
ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is also provided to explain the correlation of forming current and the filament structure including its dimension and the density of oxygen vacancy.