High-Power Photodiodes With 65 GHz Bandwidth Heterogeneously Integrated Onto Silicon-on-Insulator Nano-Waveguides

High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (-2 dBm at 20 mA). Balanced and traveling-wave photodiodes of this type have bandwidths of 20 and 35 GHz, respectively.