Static and low frequency noise characterization of n-channel 16 nm UTBOX devices

This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage, the mobility and the access resistances. Then, the approach of low frequency noise study is presented as a non-destructive diagnostic tool to identify traps in the Si film. These investigations allow to evaluate the device performances, and to assess the quality of the device processing steps.