Deformation characteristics of SOI structures at cryogenic temperatures

We investigate the strain-induced effect in silicon-on-insulator structures (SOI) doped with boron impurities to the vicinity of a metal-dielectric transition. The studies of gauge-factor of polycrystalline silicon films in SOI-structures with boron concentration ranging from 2.4×10
¹⁸
cm
^-3
to 1.7×10
²⁰
cm
^-3
were conducted in the temperature range 4, 2-100 K. The possibility of use of polycrystalline films in mechanical sensors, operable in cryogenic temperatures is discussed. We found that the gauge factor of SOI-structure depends on the mobility of charge carriers.