Application of 3D double gate Junctionless transistor for ring oscillator

In this paper, we demonstrate a circuit simulation study of three dimensional (3D) double gate junctionless transistor. A ring oscillator is prepared using 20 nm Junctionless transistor made inverter. Mixed mode TCAD simulation is performed for the inverter and ring oscillator circuit. Junctionless transistor well performed for 3-stage ring oscillator. This investigation proves Junctionless transistor is also a promising candidate for electronic circuit and communication system.