First Demonstration of SiGe Channel in Macaroni Geometry for Future 3D NAND

We demonstrate for the first time a 20% [Ge] SiGe Macaroni channel in 3D NAND. Two alternative integration routes have been explored and High Pressure Annealing Process in D2 ambient has been applied to improve the channel and the channel-SiO2 interface. Electrical performance indicates that SiGe can improve channel conduction, with minimal impact on memory performance, but has intrinsically worse off-current properties than Si.