3D Memories and Ferroelectrics

Recently, memory technology has chosen to continue in the 3rd dimension. This has enabled the extension of Moore's law for standalone memory, mainly in the nonvolatile area. Meanwhile, all manufacturers of high density NAND memories have made the turn and are now heading for the 1 Terabit chip solution using vertical memory cells in contrast to DRAM which is still in the planar 'valley of tears'. However, the current 3D NAND schemes all suffer from severe scaling issues as well, which already predicts a new red brick wall that could be reached quite soon. Because of these limitations, new (3D) schemes are highly needed in order to maintain the further scaling of memory technology.