New insights on strained SiGe channels pFET NBTI reliability

This work provides new results on the effects of the variation of Length of Diffusion (LOD), for active zones, the concentration of Germanium (Ge) and the impact of gate stack variation found on the performance and reliability in p-MOSFET transistors fabricated with a 14nm Ultra-Thin Body and Box (UTBB) FDSOI CMOS technology. Experiments show that changing the gate-to-STI distances on active (SA) or Germanium concentration has an impact on threshold Voltage (V
_th
), and on NBTI reliability. This study offers new perspectives to understand the impact of SiGe on NBTI degradation and recovery. Furthermore we show that NBTI recovery is not impacted neither by SiGe concentration nor gate stack and we also see that SiGe allows to improve NBTI degradation.