A 16 nm FinFET radiation-hardened flip-flop, bistable cross-coupled dual-modular-redundancy FF for terrestrial and outer-space highly-reliable systems

A variation-tolerant and radiation-hardened flip-flop in a 16-nm FinFET technology called Bistable Cross-coupled Dual-Modular-Redundant Flip-Flop (BCDMR FF) was fabricated, which is an improvement on the BCDMR in 65 nm bulk. The 16 nm BCDMR FF exhibits cross sections below 1e-11 cm
²
/FF at 0.8 V by Ag ions, which is 1/100 and 1/4,000 smaller than a conventional DFF in 16-nm FinFET and 65-nm planer processes respectively. With this low cross-section the BCDMR FF can be used for highly reliable and high performance systems.