Soft error rate analysis for incident angle and N-well structure dependencies using small-sized alpha source in 10nm FinFET technology

Alpha particle-induced soft error rate (alpha-SER) of SRAM built in 10 nm FinFET on bulk technology was characterized. The 10 nm FinFET SRAM devices provide the alpha-SER improvement up to ~46% comparing with 14 nm FinFET. The test result presents an alpha-SER with a small-sized alpha source for the supply voltage, SRAM design, incident angle, and MCU dependencies. The SER characteristics with small-sized alpha source can be effectively used for high-level design parameters such as SRAM interleaving distance and error correction schemes.