Failure mechanism of E-FUSE for a production chip during the ESD zapping event

On-chip electrical fuse (E-FUSE) with electrostatic discharge (ESD) protection scheme failure during point-to-point ESD stress has been reported and analyzed. ESD current flowing through the power bus-line and back-to-back diodes induces the potential difference between two ground domains. Thus induces activation of the control circuitry to programming mode, allowing E-FUSE as part of ESD discharge path.